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| DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteritics, and is contatined in a 4 pins mini-mold package which enables high-isolation gain. 2.90.2 (1.8) 0.85 0.95 PACKAGE DIMENSIONS (Units: mm) 0.4 -0.05 0.4 -0.05 0.4 0.16 -0.06 +0.1 2.8 -0.3 +0.2 1.5 -0.1 2 3 4 5 0 to 0.1 5 +0.2 +0.1 +0.1 FEATURES * Low Noise NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz * High Power Gains 1 0.6 -0.05 +0.1 S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz ORDERING INFORMATION PART NUMBER 2SC4093-T1 QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. 1.1-0.1 0.8 +0.2 5 5 2SC4093-T2 3 Kpcs/Reel. PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 12 3.0 100 200 150 V V V mA mW 65 to +150 C C Document No. P10365EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan (c) +0.1 -0.05 (1.9) 1991 2SC4093 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre 50 120 7.0 0.6 11 13 1.1 2.0 0.95 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 10 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz A A S21e2 NF Classification of hFE Rank Marking Range R26/RBF * R26 50 to 100 R27/RBG * R27 80 to 160 R28/RBH * R28 125 to 250 * Old Specification / New Specification hEF Test Condtitions: VCE = 10 V, IC = 20 mA 2 2SC4093 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT-Total Power Dissipation-mW Free Air Cre-Feed-back Capacitance-pF 200 2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 GHz 1 0.5 100 0.2 0 50 100 150 0.1 1 2 5 10 20 TA-Ambient Temperature-C DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 20 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz |S21e|2-Insertion Gain-dB 100 hFE-DC Current Gain 50 10 20 10 0.5 1 5 10 50 0 0.5 1 2 5 10 20 50 IC-Collector Current-mA GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT 20 fT-Gain Bandwidth Product-MHz VCE = 10 V Gmax-Maximum Gain-dB |S21e|2-Insetion Gain -dB 10 5 30 IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY VCE = 10 V IC = 20 mA Gmax 20 |S21e|2 2 1 0.6 1 2 5 10 20 40 10 0 0.1 0.2 0.5 f-Frequency-GHz 1.0 2.0 IC-Collector Current-mA 3 2SC4093 NOISE FIGURE vs. COLLECTOR CURRENT 7 6 NF-Noise Figure-dB 5 4 3 2 1 0 0.5 VCE = 10 V f = 1.0 GHz 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE =10 V, IC = 5 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.730 0.583 0.522 0.518 0.519 0.539 0.552 0.555 0.570 0.582 S11 76.5 118.8 146.2 166.5 178.3 166.6 157.4 149.0 140.9 134.0 S21 11.712 7.379 5.551 4.026 3.406 2.744 2.512 2.122 2.028 1.740 S21 129.6 105.6 92.2 80.8 71.9 63.1 55.2 48.5 41.9 36.4 S12 0.048 0.056 0.072 0.072 0.088 0.089 0.106 0.111 0.134 0.135 S12 47.2 43.2 38.6 40.5 40.5 44.3 45.6 44.8 49.3 47.3 S22 0.772 0.600 0.526 0.471 0.441 0.428 0.406 0.388 0.380 0.367 S22 28.1 34.9 37.7 39.8 41.6 45.4 49.4 56.1 61.8 68.0 VCE = 10 V, IC = 20 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.454 0.395 0.384 0.408 0.420 0.442 0.455 0.468 0.486 0.502 S11 114.9 153.0 172.8 173.4 162.6 154.7 147.7 141.2 133.9 128.7 S21 19.635 10.412 7.454 5.318 4.450 3.571 3.253 2.737 2.618 2.237 S21 111.0 93.3 84.4 75.5 68.8 61.4 54.6 49.0 43.0 38.4 S12 0.033 0.041 0.060 0.073 0.094 0.103 0.127 0.137 0.165 0.170 S12 46.1 58.1 55.6 61.1 58.2 58.7 55.3 53.1 52.1 48.4 S22 0.497 0.359 0.315 0.283 0.256 0.247 0.227 0.212 0.198 0.186 S22 42.5 41.2 41.0 42.5 43.2 47.8 53.0 62.2 67.4 75.5 4 2SC4093 S-PARAMETER S11e, S22e-FREQUENCY VCE = 10 V freq. = 0.2 to 2 GHz (Step 200 MHz) 1 0.6 2 0.2 S11e 2.0 GHz 5 0.2 0.6 0 1 2.0 GHz IC = 20 mA S22e -0.2 IC = 5 mA IC = 20 mA 0.2 GHz IC = 5 mA -0.6 -1 -2 0.2 GHz -5 S21e-FREQUENCY VCE = 10 V freq. = 0.2 to 2 GHz (Step 200 MHz) 90 120 IC = 20 mA 150 IC = 5 mA S21e 0.2 GHz 30 150 60 S12e-FREQUENCY VCE = 10 V freq. = 0.2 to 2 GHz (Step 200 MHz) 90 120 S12e 60 IC = 20 mA 2.0 GHz 30 IC = 5 mA 2.0 GHz 0 4 8 S21 S21 12 16 20 0 180 0 0.2 GHz 0.04 0.08 0.12 0.16 0.2 0 2.0 GHz 180 -150 -30 -150 -30 -120 -90 -60 -120 -90 -60 5 2SC4093 [MEMO] 6 2SC4093 [MEMO] 7 2SC4093 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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